| UNITED STATES | |
| SECURITIES AND EXCHANGE COMMISSION | |
| Washington, D.C. 20549 | |
| Notice of Effectiveness | |
| Effectiveness Date: | June 20, 2024 |
| Accession Number: | 0001193125-24-164074 | ||||||
| Submission Type: | POS AM | ||||||
| |||||||
| UNITED STATES | |
| SECURITIES AND EXCHANGE COMMISSION | |
| Washington, D.C. 20549 | |
| Notice of Effectiveness | |
| Effectiveness Date: | June 20, 2024 |
| Accession Number: | 0001193125-24-164074 | ||||||
| Submission Type: | POS AM | ||||||
| |||||||
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| Date | Price Target | Rating | Analyst |
|---|---|---|---|
| 6/15/2022 | $9.00 → $6.50 | Buy → Neutral | B. Riley Securities |
B. Riley Securities downgraded Transphorm from Buy to Neutral and set a new price target of $6.50 from $9.00 previously
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Accelerates Wide Bandgap Product Offering and Introduces 15 New GaN-Based Winning Combination Reference Designs Renesas Electronics Corporation ("Renesas" TSE:6723), a premier supplier of advanced semiconductor solutions, today announced that it has completed the acquisition of Transphorm, Inc. (NASDAQ:TGAN), a global leader in gallium nitride (GaN) power semiconductors, as of June 20, 2024. With the closing of the acquisition now completed, Renesas will immediately start offering GaN-based power products and related reference designs to meet the rising demand for wide bandgap (WBG) semiconductor products. This press release features multimedia. View the full release here: https://www.bu
Transphorm, Inc. (NASDAQ:TGAN)—a global leader in GaN, the future of next generation power systems, announced today its financial results for the third quarter of its fiscal year ending March 31, 2024 ("Q3 Fiscal 2024"). On January 10, 2024, Transphorm announced that it entered into a definitive agreement to be acquired by a subsidiary of Renesas Electronics Corporation. The transaction values Transphorm at approximately $339 million. Key Business Highlights Reported total revenue of $4.7 million for Q3 Fiscal 2024, an increase of 4.0% over the same quarter last year and a decrease of 6.8% from the prior quarter. Product revenue was $3.2 million in the quarter, a decrease of 20%
- Reports Second Quarter Year-Over-Year Revenue Grew 37% to $5.0 Million as Gross Margin Increased by 11.5% to 23% - Product Revenue Increased to $3.55 Million, Up 18% Over the Prior Quarter - Recently Engaged BofA Securities, Inc. to Act as Financial Advisor in Company's Strategic Review to Enhance Stockholder Value - Company to Host Webcast Today at 5:00 p.m. EST to Review Quarterly Results and Provide a Business Update Transphorm, Inc. (NASDAQ:TGAN)—a global leader in GaN, the future of next generation power systems, announced today its financial results for the second quarter of its fiscal year ending March 31, 2024 ("Q2 Fiscal 2024"). Primit Parikh, Transphorm's CEO and Co-Fo
Accelerates Wide Bandgap Product Offering and Introduces 15 New GaN-Based Winning Combination Reference Designs Renesas Electronics Corporation ("Renesas" TSE:6723), a premier supplier of advanced semiconductor solutions, today announced that it has completed the acquisition of Transphorm, Inc. (NASDAQ:TGAN), a global leader in gallium nitride (GaN) power semiconductors, as of June 20, 2024. With the closing of the acquisition now completed, Renesas will immediately start offering GaN-based power products and related reference designs to meet the rising demand for wide bandgap (WBG) semiconductor products. This press release features multimedia. View the full release here: https://www.bu
300 W DC-to-DC Battery Charger Board Showcases Key Capability of GaN Technology Necessary to Advance E-Mobility Applications Transphorm, Inc. (NASDAQ:TGAN), the global leader in robust GaN power semiconductors, today announced the release of a new 300 W DC-to-DC GaN reference design for 2- and 3-wheeled electric vehicle battery chargers. The TDDCDC-TPH-IN-BI-LLC-300W-RD design uses TP65H150G4PS 150 mOhm SuperGaN® FETs in a robust TO-220 package to power a high performing, high efficiency energy harvesting and distribution battery charging system. The new board notably demonstrates one of the most anticipated value propositions of a GaN power supply: bidirectionality. This capability indic
Lower Losses, Higher Performance Delivered by Transphorm's Normally-off d-mode Platform Enables Electric Vehicle, Datacenter/AI, and Other Multi-market Power Systems, Along with Groundbreaking GaN Product Innovations Transphorm, Inc. (NASDAQ:TGAN), the global leader in robust GaN power semiconductors, announced today that its PCIM 2024 showcase will underscore its ability to outperform competitive wide bandgap technologies in higher power systems. For example, Transphorm's normally-off d-mode SuperGaN® platform delivers higher electron mobility resulting in lower crossover losses versus Silicon Carbide—making it more a cost-effective, higher performing solution for various electric vehicl
Follows Retirement of CEO and as part of the Company's Planned Succession Strategy Transphorm, Inc. (NASDAQ:TGAN)—a pioneer in and global supplier of high-reliability, high-performance gallium nitride (GaN) power conversion products, announced that its Board of Directors has appointed Dr. Primit Parikh as President and Chief Executive Officer of the Company and as a member of the Board. The Board also appointed Dr. Umesh Mishra to serve as Chair of the Board. Both of these appointments are effective May 15, 2023. Dr. Parikh and Dr. Mishra, who co-founded the Company's main operating subsidiary Transphorm Technology Inc., succeed Mario Rivas, who has served as the Company's Chief Executi
Company Veterans and Industry Leaders to Drive Next Phase of Growth Transphorm, Inc. (NASDAQ:TGAN)—a pioneer in and a global supplier of high reliability, high performance gallium nitride (GaN) power conversion products—announced today the appointment of six company leaders. The roles are being filled by company veterans as well as newly hired experts, strategically building out Transphorm's executive bench. The collective sales, operations, engineering, and product marketing skillsets brought by these individuals will contribute to Transphorm's business growth and customer support strategies as the company responds to a rapidly rising demand for high voltage GaN power semiconductors acros
300 W DC-to-DC Battery Charger Board Showcases Key Capability of GaN Technology Necessary to Advance E-Mobility Applications
Transphorm (NASDAQ:TGAN) reported quarterly losses of $(0.11) per share which missed the analyst consensus estimate of $(0.09) by 22.22 percent. This is a 31.25 percent increase over losses of $(0.16) per share from the same period last year. The company reported quarterly sales of $4.67 million which missed the analyst consensus estimate of $6.17 million by 24.31 percent. This is a 3.94 percent increase over sales of $4.49 million the same period last year.
New FETs Serve as an Original Design Option or Drop-In Replacement for SiCTransphorm, Inc. (NASDAQ:TGAN), the global leader in robust GaN power semiconductors, today announced availability of two new SuperGaN® devices in a 4-lead TO-247 package (TO-247-4L). The new TP65H035G4YS and TP65H050G4YS FETs offer a 35 mOhm and 50 mOhm on resistance respectively, complete with a kelvin-source terminal that gives customers versatile switching capabilities with even lower energy losses. The new products will run on Transphorm's well-established GaN-on-Silicon substrate manufacturing process that is cost-effective, reliable, and well-suited for high volume manufacturing on silicon production lines. The